Crystalline Structure and Cu Diffusion Barrier Property of Ta-Si-N Films
نویسندگان
چکیده
منابع مشابه
Chemical stability of Ta diffusion barrier between Cu and Si
The reactions in the SirTarCu metallization system produced by the sputtering process were investigated by means of sheet Ž . Ž . resistance measurements, X-ray diffraction XRD , Rutherford backscattering spectroscopy RBS , scanning electron microscopy Ž . SEM and optical microscopy. In particular, the reaction sequence was emphasized. The reaction mechanisms and their relation to the microstru...
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Amorphous Ta-Si-N thin films of a wide range of compositions were prepared by r~ ~eactive sputtering of a Ta5Si3 target in a N2/ Ar plasma. The relatio~shi~ betwee~ films' compos1t10n an~ resistivity is reported. All obtained films were tested as dtffuston barners between ~1 and S1. Backscattering spectrometry combined with cross-sectional transmis_sion electron m1eroscopy were used to determin...
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The diffusion barrier properties of as-deposited amorphous TaNx (x ' 0.5) and crystalline TaN between Cu and SiO2 have been investigated in Cu/Ta-N/Ta/SiO2 structures. The thermal reactions of Cu/TaNx /Ta/SiO2 and Cu/TaN/Ta/SiO2 after annealing in vacuum at 500 to 900°C were investigated by using sheet resistance measurements, glancing incident angle X-ray diffraction, scanning electron microsc...
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Various structures of Cu (50 nm)/Ru (2 nm)/MgO (0.5-3 nm)/Ta (2 nm)/Si were prepared by sputtering and electroplating techniques, in which the ultra-thin trilayer of Ru (2 nm)/MgO (0.5-3 nm)/Ta (2 nm) is used as the diffusion barrier against the interdiffusion between Cu film and Si substrate. The various structures of Cu/Ru/MgO/Ta/Si were characterized by four-point probes for their sheet resi...
متن کاملMicrostructure and thermal stability of ultrathin Ta-based diffusion barriers
the dimensions of Cu interconnect structures continue to shrink, barrier layers have to scale down, too. Consequently, the microstructure of barriers becomes more and more important for product reliability. Tantalum is immiscible with Cu and provides films with excellent adhesion properties thus being an attractive candidate for such barriers. Though the thermomechanical behavior of Ta based fi...
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ژورنال
عنوان ژورنال: Korean Journal of Materials Research
سال: 2011
ISSN: 1225-0562
DOI: 10.3740/mrsk.2011.21.2.95